DISLOCATION-FREE COPPER - CASE HISTORY

被引：3

作者：

BUCKLEYGOLDER, I ^{[1
]}

机构：

[1] UNIV OXFORD,DEPT MET & SCI MAT,OXFORD OX1 3PH,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1977年 / 40卷 / 02期

关键词：

D O I：

10.1016/0022-0248(77)90004-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：189 / 194

页数：6

共 50 条

[31] GROWTH OF DISLOCATION-FREE SILICON WEB CRYSTALS
TUCKER, TN
SCHWUTTK.GH
APPLIED PHYSICS LETTERS, 1966, 9 (06) : 219 - &
[32] DISLOCATION-FREE GALLIUM ARSENIDE - SINGLE CRYSTALS
STEINEMA.A
ZIMMERLI, U
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, S : 81 - &
[33] MULTINUCLEAR GROWTH OF DISLOCATION-FREE PLANES IN ELECTROCRYSTALLIZATION
BOSTANOV, W
ROUSSINO.R
BUDEVSKI, E
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (08) : C218 - &
[34] EVIDENCE FOR VACANCY CLUSTERS IN DISLOCATION-FREE GE
TWEET, AG
JOURNAL OF APPLIED PHYSICS, 1958, 29 (11) : 1520 - 1522
[35] Dislocation-free silicon on sapphire by wafer bonding
Abe, Takao
Ohki, Konomu
Uchiyama, Atsuo
Nakazawa, Kazushi
Nakazato, Yasuyuki
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1994, 33 (1 B): : 514 - 518
[36] MULTINUCLEAR GROWTH OF DISLOCATION-FREE PLANES IN ELECTROCRYSTALLIZATION
BOSTANOV, V
BUDEVSKI, E
ROUSSINOVA, R
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (10) : 1346 - +
[37] THE GROWTH OF DISLOCATION-FREE BICRYSTAL SILICON RIBBON
CHENG, Y
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1993, 26 (07) : 1109 - 1113
[38] DISLOCATION-FREE ZONE IN FRONT OF A FATIGUE CRACK
LI, J
LAKSHMANAN, V
LI, JCM
JOURNAL OF METALS, 1988, 40 (11): : 7 - 7
[39] A DISLOCATION-FREE MECHANISM OF GROWTH OF REAL CRYSTALS
DISTLER, GI
ZVYAGIN, BB
NATURE, 1966, 212 (5064) : 807 - &
[40] KINETICS OF OXYGEN PRECIPITATION IN DISLOCATION-FREE SILICON
FREELAND, PE
JACKSON, KA
LOWE, CW
PATEL, JR
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1976, 21 (03): : 229 - 229

← 1 2 3 4 5 →