RAMAN-SCATTERING ANALYSIS OF INAS/GASB ULTRATHIN-LAYER SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY

被引：21
|
作者：
YANO, M
FURUSE, H
IWAI, Y
YOH, K
INOUE, M
机构：
[1] New Materials Research Center, Osaka Institute of Technology, Osaka, 535, Asahi-ku Ohmiya
来源：
JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(93)90737-H
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Raman scattering analysis has been performed to study characteristic phonon modes in InAs/GaSb ultrathin-layer superlattices (ULSs) grown by molecular beam epitaxy. Either interface bond InSb or GaAs was selectively made in the ULSs by controlling the beam supply sequence during growth. In addition to the acoustic and optic phonons modulated by ULS structure, the Raman spectra were composed of two different types of new phonon mode localized at each interface of InSb or GaAs. These experimental data have been understood in agreement with the theoretical analysis.
引用
收藏
页码：807 / 811
页数：5
相关论文
共 50 条
  • [31] RAMAN-SCATTERING FROM HEAVILY DOPED (311) GAAS-SI GROWN BY MOLECULAR-BEAM EPITAXY
    KWOK, SH
    MERLIN, R
    LI, WQ
    BHATTACHARYA, PK
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (01) : 285 - 286
  • [32] OPTICAL-PROPERTIES OF (113)GAAS/ALAS SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY AND ATOMIC LAYER MOLECULAR-BEAM EPITAXY
    BACQUET, G
    HASSEN, F
    LAURET, N
    ARMELLES, G
    DOMINGUEZ, PS
    GONZALEZ, L
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (01) : 339 - 342
  • [33] Interface Design Development for Growing Short-Period InAs/GaSb Superlattices by Molecular-Beam Epitaxy
    Krivobok, V. S.
    Pashkeev, D. A.
    Klekovkin, A. V.
    Minaev, I. I.
    Savin, K. A.
    Eroshenko, G. N.
    Goncharov, A. E.
    Nikolaev, S. N.
    BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE, 2023, 50 (09) : 396 - 402
  • [34] Interface Design Development for Growing Short-Period InAs/GaSb Superlattices by Molecular-Beam Epitaxy
    V. S. Krivobok
    D. A. Pashkeev
    A. V. Klekovkin
    I. I. Minaev
    K. A. Savin
    G. N. Eroshenko
    A. E. Goncharov
    S. N. Nikolaev
    Bulletin of the Lebedev Physics Institute, 2023, 50 : 396 - 402
  • [35] GROWTH BY MOLECULAR-BEAM EPITAXY AND CHARACTERIZATION OF INAS/GAAS STRAINED-LAYER SUPERLATTICES
    GOLDSTEIN, L
    GLAS, F
    MARZIN, JY
    CHARASSE, MN
    LEROUX, G
    APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1099 - 1101
  • [36] ALSB-GASB AND ALAS-GAAS MONOLAYER SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY
    HIRAYAMA, Y
    OHMORI, Y
    OKAMOTO, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (07): : L488 - L489
  • [37] Growth of InAs/GaSb type-II superlattices by gas-source molecular-beam epitaxy
    Li, J.
    Gong, Q.
    Li, S. G.
    Li, A. Z.
    Lin, C.
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (07) : 1703 - 1706
  • [38] HGTE/CDTE SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY
    FAURIE, JP
    BOUKERCHE, M
    SIVANANTHAN, S
    RENO, J
    HSU, C
    SUPERLATTICES AND MICROSTRUCTURES, 1985, 1 (03) : 237 - 244
  • [39] ALGAAS DOPING SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY
    ACKLEY, DE
    LEE, H
    NOURI, N
    COLVARD, C
    APPLIED PHYSICS LETTERS, 1988, 52 (22) : 1883 - 1885
  • [40] (INAS)(1)/(GAAS)(4) SHORT-PERIOD STRAINED-LAYER SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY
    LEWIS, JH
    SPENCER, MG
    GRIFFIN, JA
    ZHANG, DP
    GRUNTHANER, F
    GEORGE, T
    COMPOUND SEMICONDUCTORS 1994, 1995, (141): : 167 - 172
12345