RAMAN-SCATTERING ANALYSIS OF INAS/GASB ULTRATHIN-LAYER SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY

被引：21
|
作者：
YANO, M
FURUSE, H
IWAI, Y
YOH, K
INOUE, M
机构：
[1] New Materials Research Center, Osaka Institute of Technology, Osaka, 535, Asahi-ku Ohmiya
来源：
JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(93)90737-H
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Raman scattering analysis has been performed to study characteristic phonon modes in InAs/GaSb ultrathin-layer superlattices (ULSs) grown by molecular beam epitaxy. Either interface bond InSb or GaAs was selectively made in the ULSs by controlling the beam supply sequence during growth. In addition to the acoustic and optic phonons modulated by ULS structure, the Raman spectra were composed of two different types of new phonon mode localized at each interface of InSb or GaAs. These experimental data have been understood in agreement with the theoretical analysis.
引用
收藏
页码：807 / 811
页数：5
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