A TRANSPORT STUDY OF ARSENIC IMPLANTED SILICON - INFLUENCE OF THERMAL ANNEALING

被引：10
|
作者：
CHRISTOFIDES, C
GHIBAUDO, G
JAOUEN, H
机构：
来源：
REVUE DE PHYSIQUE APPLIQUEE | 1987年 / 22卷 / 06期
关键词：
D O I：
10.1051/rphysap:01987002206040700
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：407 / 412
页数：6
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