A TRANSPORT STUDY OF ARSENIC IMPLANTED SILICON - INFLUENCE OF THERMAL ANNEALING

被引：10

|

作者：

CHRISTOFIDES, C

GHIBAUDO, G

JAOUEN, H

机构：

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1987年 / 22卷 / 06期

关键词：

D O I：

10.1051/rphysap:01987002206040700

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：407 / 412

页数：6

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