PRECIPITATION OF OXYGEN IN DISLOCATION-FREE SILICON

被引：117
|
作者：
TEMPELHOFF, K [1 ]
SPIEGELBERG, F [1 ]
GLEICHMANN, R [1 ]
WRUCK, D [1 ]
机构：
[1] ACAD SCI GDR,INST FESTKORPERPHYS & ELEKTRONENMIKROSKOPIE,DDR-401 HALLE,GER DEM REP
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 56卷 / 01期
关键词：
D O I：
10.1002/pssa.2210560123
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：213 / 223
页数：11
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