PRECIPITATION OF OXYGEN IN DISLOCATION-FREE SILICON

被引：117
|
作者：
TEMPELHOFF, K [1 ]
SPIEGELBERG, F [1 ]
GLEICHMANN, R [1 ]
WRUCK, D [1 ]
机构：
[1] ACAD SCI GDR,INST FESTKORPERPHYS & ELEKTRONENMIKROSKOPIE,DDR-401 HALLE,GER DEM REP
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 56卷 / 01期
关键词：
D O I：
10.1002/pssa.2210560123
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：213 / 223
页数：11
相关论文
共 50 条
  • [31] DISLOCATION-FREE SILICON-ON-SAPPHIRE BY WAFER BONDING
    ABE, T
    OHKI, K
    UCHIYAMA, A
    NAKAZAWA, K
    NAKAZATO, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1B): : 514 - 518
  • [32] Basal plane dislocation-free epitaxy of silicon carbide
    Zhang, Z
    Sudarshan, TS
    APPLIED PHYSICS LETTERS, 2005, 87 (15) : 1 - 3
  • [33] Mechanics of Defects in Dislocation-Free Silicon Single Crystals
    N. A. Verezub
    A.I. Prostomolotov
    Mechanics of Solids, 2023, 58 : 383 - 403
  • [34] Microdefects in Dislocation-free Silicon Single Crystals.
    Eidenzon, A.M.
    Puzanov, N.I.
    Kalyuzhnaya, S.I.
    Tsvetnye Metally, 1984, (03): : 64 - 67
  • [35] EFFECT OF DOPING ON THE BEHAVIOR OF MICRODEFECTS IN DISLOCATION-FREE SILICON
    POSTOLOV, VG
    BUBLIK, VT
    KOVEV, EK
    LITVINOV, YM
    INORGANIC MATERIALS, 1987, 23 (11) : 1559 - 1562
  • [36] GROWTH OF DISLOCATION-FREE BULK SILICON-CRYSTALS
    BAGAI, RK
    BORLE, WN
    PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1983, 6 (01): : 25 - 46
  • [37] Optical anisotropy in dislocation-free silicon single crystals
    Chu, T
    Yamada, M
    Donecker, J
    Rossberg, M
    Alex, V
    Riemann, H
    MICROELECTRONIC ENGINEERING, 2003, 66 (1-4) : 327 - 332
  • [38] Mechanics of Defects in Dislocation-Free Silicon Single Crystals
    Verezub, N. A.
    Prostomolotov, A. I.
    MECHANICS OF SOLIDS, 2023, 58 (02) : 383 - 403
  • [39] FORMATION OF VACANCY AGGLOMERATES IN QUENCHED DISLOCATION-FREE SILICON
    TEMPELHOFF, K
    VANSUNG, N
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 72 (02): : 617 - 622
  • [40] Dislocation-free strained silicon-on-silicon by in-place bonding
    Cohen, GM
    Mooney, PM
    Paruchuri, VK
    Hovel, HJ
    APPLIED PHYSICS LETTERS, 2005, 86 (25) : 1 - 3
12345