An Optimum Body Biasing for Gain and Linearity Control in CMOS Low-Noise Amplifiers

被引:0
|
作者
Mabrouki, Aya [1 ]
Taris, Thierry [1 ]
Deval, Yann [1 ]
Begueret, Jean-Baptiste [1 ]
机构
[1] Lab IMS, Bat A31,351 Cours Liberat, F-33400 Talence, France
关键词
Low Noise Amplifier (LNA); Noise Figure (NF); Third Order Intercept Point (IIP3); Third Order Intermodulation Distortion (IM3); Digital to Analog Converter (DAC);
D O I
10.1166/jolpe.2011.1128
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, an optimum body biasing for gain and linearity control in CMOS Low Noise Amplifier (LNA) is discussed. A digitally controlled highly linear CMOS LNA has been designed and implemented in a 0.13 mu m CMOS process. An off chip Digital to Analog Converter (DAC) is used to generate the proper body bias voltage corresponding to a maximum of the input referred third order intercept point (IIP3). The LNA is suitable for reconfigurable purposes due to its smooth control of gain and linearity. It is dedicated to wireless sensor network applications in the 2.4 GHz ISM Band. The circuit achieves 12.4 dB nominal gain, 4.2 dB noise figure (NF), and -1 dBm IIP3 while drawing 3.1 mA at a 1 V supply. When adjusting the body bias to -0.55 V, the IIP3 peaks at 6 dBm for a 1.7 mA current consumption. The gain and NF are 8.9 dB and 6.2 dB respectively.
引用
收藏
页码:199 / 208
页数:10
相关论文
共 50 条
  • [1] Applications of Body Biasing in Multistage CMOS Low-Noise Amplifiers
    Rashtian, Hooman
    Mirabbasi, Shahriar
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2014, 61 (06) : 1638 - 1647
  • [2] CMOS Low-Noise Amplifier Linearization through Body Biasing
    Mabrouki, Aya
    Taris, Thierry
    Deval, Yann
    Begueret, Jean-Baptiste
    2009 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT 2009), 2009, : 24 - 27
  • [3] CMOS Low-Noise Amplifier Linearization through Body Biasing
    Mabrouki, Aya
    Taris, Thierry
    Deval, Yann
    Begueret, Jean-Baptiste
    2009 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY: SYNERGY OF RF AND IC TECHNOLOGIES, PROCEEDINGS, 2009, : 150 - 153
  • [4] A 4-stage 60-GHz low-noise amplifier in 65-nm CMOS with body biasing to control gain, linearity, and input matching
    Hooman Rashtian
    Shahriar Mirabbasi
    Thierry Taris
    Yann Deval
    Jean-Baptiste Begueret
    Analog Integrated Circuits and Signal Processing, 2012, 73 : 757 - 768
  • [5] A 4-stage 60-GHz low-noise amplifier in 65-nm CMOS with body biasing to control gain, linearity, and input matching
    Rashtian, Hooman
    Mirabbasi, Shahriar
    Taris, Thierry
    Deval, Yann
    Begueret, Jean-Baptiste
    ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2012, 73 (03) : 757 - 768
  • [6] A Linearity Enhancement Technique and its Application to CMOS Wideband Low-Noise Amplifiers
    Shirazi, Amir Hossein Masnadi
    Rashtian, Hooman
    Mirabbasi, Shahriar
    2012 19TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS (ICECS), 2012, : 57 - 60
  • [7] Desensitized CMOS low-noise amplifiers
    Banerjee, Gaurab
    Sournyanath, K.
    Allstot, David J.
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2008, 55 (03) : 752 - 765
  • [8] INTEGRATED LOW-NOISE AMPLIFIERS IN CMOS TECHNOLOGY
    SANSEN, W
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1987, 253 (03): : 427 - 433
  • [9] Design considerations for CMOS low-noise amplifiers
    Allstot, DJ
    Li, XY
    Shekhar, S
    2004 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2004, : 97 - 100
  • [10] Modern Designs for CMOS Low-Noise Transimpedance Amplifiers
    Romanova, Agata
    Barzdenas, Vaidotas
    2018 OPEN CONFERENCE OF ELECTRICAL, ELECTRONIC AND INFORMATION SCIENCES (ESTREAM), 2018,