An Optimum Body Biasing for Gain and Linearity Control in CMOS Low-Noise Amplifiers

被引:0
|
作者
Mabrouki, Aya [1 ]
Taris, Thierry [1 ]
Deval, Yann [1 ]
Begueret, Jean-Baptiste [1 ]
机构
[1] Lab IMS, Bat A31,351 Cours Liberat, F-33400 Talence, France
关键词
Low Noise Amplifier (LNA); Noise Figure (NF); Third Order Intercept Point (IIP3); Third Order Intermodulation Distortion (IM3); Digital to Analog Converter (DAC);
D O I
10.1166/jolpe.2011.1128
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, an optimum body biasing for gain and linearity control in CMOS Low Noise Amplifier (LNA) is discussed. A digitally controlled highly linear CMOS LNA has been designed and implemented in a 0.13 mu m CMOS process. An off chip Digital to Analog Converter (DAC) is used to generate the proper body bias voltage corresponding to a maximum of the input referred third order intercept point (IIP3). The LNA is suitable for reconfigurable purposes due to its smooth control of gain and linearity. It is dedicated to wireless sensor network applications in the 2.4 GHz ISM Band. The circuit achieves 12.4 dB nominal gain, 4.2 dB noise figure (NF), and -1 dBm IIP3 while drawing 3.1 mA at a 1 V supply. When adjusting the body bias to -0.55 V, the IIP3 peaks at 6 dBm for a 1.7 mA current consumption. The gain and NF are 8.9 dB and 6.2 dB respectively.
引用
收藏
页码:199 / 208
页数:10
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