CMOS Low-Noise Amplifier Linearization through Body Biasing

被引：6
|
作者：
Mabrouki, Aya [1 ]
Taris, Thierry [1 ]
Deval, Yann [1 ]
Begueret, Jean-Baptiste [1 ]
机构：
[1] IMS Lab, Talence, France
来源：
2009 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY: SYNERGY OF RF AND IC TECHNOLOGIES, PROCEEDINGS | 2009年
关键词：
D O I：
10.1109/RFIT.2009.5383741
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new linearization technique for CMOS low-noise amplifiers (LNAs) based on body biasing is presented. Analysis and measurement results show that the third order intercept point (IIP3) can be optimized using a proper body bias. The LNA, intended for wireless sensor network applications in the 2.4GHz ISM Band, is implemented in a 0.13 mu m CMOS technology. An 11dBm peak in IIP3 occurs when adjusting the bulk to source voltage to -0.55 V, wherein the gain and NF reach 9dB and 6.2dB respectively, for a 2mW overall power consumption.
引用
收藏
页码：150 / 153
页数：4
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