CMOS Low-Noise Amplifier Linearization through Body Biasing

被引：0

作者：

Mabrouki, Aya ^{[1
]}

Taris, Thierry ^{[1
]}

Deval, Yann ^{[1
]}

Begueret, Jean-Baptiste ^{[1
]}

机构：

[1] IMS Lab, Talence, France

来源：

2009 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT 2009) | 2009年

关键词：

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

A new linearization technique for CMOS low-noise amplifiers (LNAs) based on body biasing is presented. Analysis and measurement results show that the third order intercept point (IIP3) can be optimized using a proper body bias. The LNA, intended for wireless sensor network applications in the 2.4GHz ISM Band, is implemented in a 0.13 mu m CMOS technology. It achieves a nominal gain of 12.6dB, 4.2dB of noise figure (NF), and -4dBm of IIP3 while drawing 3.4mA from a 1V supply. An 11dBm peak in IIP3 occurs when adjusting the bulk to source voltage to -0.55 V. wherein the gain and NF reach 9dB and 6.2dB respectively, for a 2mW overall power consumption.

引用

页码：24 / 27

页数：4

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