TRAPPING LEVELS IN SILICON-SILICON NITRIDE SYSTEM

被引：26
|
作者：
KENDALL, EJM
机构：
来源：
PHYSICA STATUS SOLIDI | 1969年 / 32卷 / 02期
关键词：
D O I：
10.1002/pssb.19690320229
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
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页码：763 / &
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