首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
ELECTRICAL CHARACTERISTICS OF POLYCRYSTALLINE SILICON-SILICON NITRIDE SILICON DIOXIDE SILICON STRUCTURES
被引:4
|
作者
:
MAEKAWA, M
论文数:
0
引用数:
0
h-index:
0
MAEKAWA, M
机构
:
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS
|
1972年
/ 11卷
/ 09期
关键词
:
D O I
:
10.1143/JJAP.11.1251
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1251 / &
相关论文
共 50 条
[1]
INTERFACE CHARACTERISTICS OF SILICON-SILICON NITRIDE STRUCTURES
CHU, TL
论文数:
0
引用数:
0
h-index:
0
CHU, TL
SZEDON, JR
论文数:
0
引用数:
0
h-index:
0
SZEDON, JR
LEE, CH
论文数:
0
引用数:
0
h-index:
0
LEE, CH
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(08)
: C214
-
&
[2]
Annealing of silicon-silicon dioxide structures
Safarov, AS
论文数:
0
引用数:
0
h-index:
0
机构:
Tashkent State Univ Technol, Tashkent, Uzbekistan
Tashkent State Univ Technol, Tashkent, Uzbekistan
Safarov, AS
Egamberdiev, BE
论文数:
0
引用数:
0
h-index:
0
机构:
Tashkent State Univ Technol, Tashkent, Uzbekistan
Tashkent State Univ Technol, Tashkent, Uzbekistan
Egamberdiev, BE
[J].
JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS,
1998,
43
(02)
: 211
-
212
[3]
SOME ELECTRICAL PROPERTIES OF SILICON-SILICON DIOXIDE SYSTEM
LAMB, DR
论文数:
0
引用数:
0
h-index:
0
LAMB, DR
[J].
THIN SOLID FILMS,
1970,
5
(04)
: 247
-
&
[4]
SILICON-SILICON DIOXIDE SYSTEM
GRAY, PV
论文数:
0
引用数:
0
h-index:
0
GRAY, PV
[J].
PROCEEDINGS OF THE IEEE,
1969,
57
(09)
: 1543
-
+
[5]
Local Oscillations of Silicon-Silicon Bonds in Silicon Nitride
Volodin, V. A.
论文数:
0
引用数:
0
h-index:
0
机构:
Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia
Novosibirsk State Univ, Novosibirsk 630090, Russia
Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia
Volodin, V. A.
Gritsenko, V. A.
论文数:
0
引用数:
0
h-index:
0
机构:
Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia
Novosibirsk State Univ, Novosibirsk 630090, Russia
Novosibirsk State Tech Univ, Novosibirsk 630090, Russia
Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia
Gritsenko, V. A.
Chin, A.
论文数:
0
引用数:
0
h-index:
0
机构:
Natl Chao Tung Univ, Hsinchu, Taiwan
Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia
Chin, A.
[J].
TECHNICAL PHYSICS LETTERS,
2018,
44
(05)
: 424
-
427
[6]
ELECTRICAL CHARACTERISTICS OF POLYCRYSTALLINE SILICON-ALUMINUM OXIDE-SILICON DIOXIDE-SILICON STRUCTURE
MAEDA, K
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LTD,SEMICOND DIV,KAWASAKI,JAPAN
FUJITSU LTD,SEMICOND DIV,KAWASAKI,JAPAN
MAEDA, K
SHIRAI, K
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LTD,SEMICOND DIV,KAWASAKI,JAPAN
FUJITSU LTD,SEMICOND DIV,KAWASAKI,JAPAN
SHIRAI, K
NAKANO, J
论文数:
0
引用数:
0
h-index:
0
机构:
FUJITSU LTD,SEMICOND DIV,KAWASAKI,JAPAN
FUJITSU LTD,SEMICOND DIV,KAWASAKI,JAPAN
NAKANO, J
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1974,
13
(07)
: 1173
-
1174
[7]
TRAPPING LEVELS IN SILICON-SILICON NITRIDE SYSTEM
KENDALL, EJM
论文数:
0
引用数:
0
h-index:
0
KENDALL, EJM
[J].
PHYSICA STATUS SOLIDI,
1969,
32
(02):
: 763
-
&
[8]
INVESTIGATION OF LPCVD POLYCRYSTALLINE SILICON-SILICON DIOXIDE INTERFACE USING SIMS AND AES
SHARMA, PP
论文数:
0
引用数:
0
h-index:
0
机构:
FAIRCHILD CAMERA & INSTRUMENT CORP,MOS PROC ENGN GRP,PALO ALTO,CA 94304
FAIRCHILD CAMERA & INSTRUMENT CORP,MOS PROC ENGN GRP,PALO ALTO,CA 94304
SHARMA, PP
SHEU, J
论文数:
0
引用数:
0
h-index:
0
机构:
FAIRCHILD CAMERA & INSTRUMENT CORP,MOS PROC ENGN GRP,PALO ALTO,CA 94304
FAIRCHILD CAMERA & INSTRUMENT CORP,MOS PROC ENGN GRP,PALO ALTO,CA 94304
SHEU, J
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1982,
129
(08)
: C329
-
C329
[9]
ELECTRICAL CHARACTERISTICS OF TANTALUM PENTOXIDE SILICON-DIOXIDE SILICON STRUCTURES
SEKI, S
论文数:
0
引用数:
0
h-index:
0
SEKI, S
UNAGAMI, T
论文数:
0
引用数:
0
h-index:
0
UNAGAMI, T
TSUJIYAMA, B
论文数:
0
引用数:
0
h-index:
0
TSUJIYAMA, B
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1985,
132
(01)
: 199
-
202
[10]
SILICON-SILICON DIOXIDE INTERFACE - AN INFRARED STUDY
BOYD, IW
论文数:
0
引用数:
0
h-index:
0
机构:
HERIOT WATT UNIV,DEPT PHYS,EDINBURGH EH14 4AS,MIDLOTHIAN,SCOTLAND
HERIOT WATT UNIV,DEPT PHYS,EDINBURGH EH14 4AS,MIDLOTHIAN,SCOTLAND
BOYD, IW
WILSON, JIB
论文数:
0
引用数:
0
h-index:
0
机构:
HERIOT WATT UNIV,DEPT PHYS,EDINBURGH EH14 4AS,MIDLOTHIAN,SCOTLAND
HERIOT WATT UNIV,DEPT PHYS,EDINBURGH EH14 4AS,MIDLOTHIAN,SCOTLAND
WILSON, JIB
[J].
JOURNAL OF APPLIED PHYSICS,
1987,
62
(08)
: 3195
-
3200
←
1
2
3
4
5
→