DEPLETION LAYER FORMATION, SPACE-CHARGE INJECTION AND CURRENT-VOLTAGE CHARACTERISTICS FOR SILICON P-N-P- (N-P-N) STRUCTURE

被引：1
|
作者：
WRIGHT, GT
机构：
来源：
SOLID-STATE ELECTRONICS | 1972年 / 15卷 / 04期
关键词：
D O I：
10.1016/0038-1101(72)90108-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：381 / &
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