Unified model for p-n junction current-voltage characteristics

被引：3
|
作者：
Cristea, Miron J. [1 ]
机构：
[1] Univ Politehn Bucuresti, Fac Elect Telecommun & Informat Technol, Bucharest, Romania
来源：
OPEN ENGINEERING | 2011年 / 1卷 / 01期
关键词：
P-N junctions; Current-voltage characteristics; Low injection; High injection level; Parameter extraction;
D O I：
10.2478/s13531-011-0006-9
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Current-voltage p-n junction characteristics have been analyzed mainly at low injection levels. The high injection level region of the I/V characteristic allows the possibility of determining basic parameters of the semiconductor material, like the bulk doping concentration and charge carrier lifetime. Based on a new theoretical model of the p-n junction characteristics, valid for both low level and high level regions, a new general equation of the p-n junction is presented. It can serve for parameter extraction of semiconductor devices.
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页码：113 / 116
页数：4
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