SPACE-CHARGE CAPACITANCE OF A P-N-JUNCTION

被引：6

作者：

PARROTT, JE ^{[1
]}

机构：

[1] UNIV WALES,INST SCI & TECHNOL,DEPT APPL PHYS,CARDIFF,WALES

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1974年 / 26卷 / 01期

关键词：

D O I：

10.1002/pssa.2210260107

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：89 / 97

页数：9

共 50 条

[1] SPACE-CHARGE CAPACITANCE OF AN ABRUPT P-N-JUNCTION
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[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 34 (01): : K43 - K46
[2] CAPACITANCE OF SEMICONDUCTOR P-N-JUNCTION SPACE-CHARGE LAYERS - AN OVERVIEW
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[4] FORWARD-VOLTAGE CAPACITANCE AND THICKNESS OF P-N-JUNCTION SPACE-CHARGE REGIONS
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[7] BOUNDARY CONDITIONS FOR SPACE-CHARGE REGION OF A P-N-JUNCTION
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[8] SPACE-CHARGE RECOMBINATION CURRENT IN A DIFFUSED P-N-JUNCTION
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[9] SIMPLE-MODEL FOR SPACE-CHARGE REGION CAPACITANCE OF AN EXPONENTIAL-CONSTANT P-N-JUNCTION
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[10] DIFFERENTIAL DC CONDUCTANCE OF A P-N-JUNCTION SPACE-CHARGE REGION
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