IMPROVED TRANSCONDUCTANCE OF ALGAAS/GAAS HETEROSTRUCTURE FET WITH SI-DOPED CHANNEL

被引：7
|
作者：
INOMATA, H
NISHI, S
TAKAHASHI, S
KAMINISHI, K
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1986年 / 25卷 / 09期
关键词：
D O I：
10.1143/JJAP.25.L731
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L731 / L733
页数：3
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