Optimization of double barrier doped heterostructure AlGaAs/GaAs/AlGaAs/GaAs for ultra high frequency FET

被引：1
|
作者：
Galiev, GB [1 ]
Kaminskii, VE [1 ]
Kul'bachinskii, VA [1 ]
机构：
[1] Russian Acad Sci, Inst Radio Engn & Elect, Moscow 103907, Russia
来源：
MICRO- AND NANOELECTRONICS 2003 | 2004年 / 5401卷
关键词：
quantum well; mobility; FET;
D O I：
10.1117/12.558789
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The conductivity and Hall mobility have been measured in heterostructures with quantum well (QW) as functions of temperature and the QW width. If a tunnel-transparent barrier is inserted in the middle of a QW, the mobility increases in narrow wells and decreases in wide wells. The experimental data have been compared with the calculated dependences. It has been shown that the number of filled quantum well subbands depends on the well width and the presence of a barrier.
引用
收藏
页码：466 / 471
页数：6
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