AlGaAs-GaAs heterostructure δ-doped field-effect transistor (δ-FET)

被引：12
|
作者：
Chakhnakia, Z [1 ]
Khvedelidze, L [1 ]
Khuchua, N [1 ]
Melkadze, R [1 ]
Peradze, G [1 ]
Sakharova, TB [1 ]
Hatzopoulos, Z [1 ]
机构：
[1] Tbilisi State Univ, Res & Prod Complex Electron Technol, GE-380086 Tbilisi, Georgia
来源：
MICRO- AND NANOELECTRONICS 2003 | 2004年 / 5401卷
关键词：
delta-doped field-effect transistor; molecular beam epitaxy; modeling; simulation; digital and analog applications;
D O I：
10.1117/12.558432
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Molecular-beam epitaxy - grown heterostructure field-effect transistors employing a delta-doped channel have been fabricated and investigated. The results of studies of DC parameters of delta-FET's of different configuration can be regarded as the best obtained by other authors for single delta-doped structures These data as well as the results of modeling and simulation allow one to recommend the studied delta-FET's for digital and analog applications.
引用
收藏
页码：354 / 361
页数：8
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