InGaAs/GaAs composite doped channel heterostructure field-effect transistor

被引：0
|
作者：
Yu, KH [1 ]
Liu, WC [1 ]
Lin, KP [1 ]
Yen, CH [1 ]
Wang, CK [1 ]
Chuang, HM [1 ]
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan
来源：
STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXXV) | 2001年 / 2001卷 / 20期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The temperature-dependent characteristics of an n(+)-InGaAs/nGaAs composite doped channel (CDC) heterostructure field-effect transistor (HFET) have been studied. Due to the reduction of leakage current and good carrier confinement in the n(+)-InGaAs/n-GaAs CDC structure, the degradation of device performances with increasing the temperature is insignificant. Experimentally, for a 1 X 100 mum(2) device, the gate-drain breakdown voltage of 24.5 (22.0) V, turn-on voltage of 2.05 (1.70) V, transconductance of 161 (137) mS/mm, output conductance of 0.60 (0.60) mS/mm, and voltage gain of 268 (228) are obtained at 300 (450) K, respectively. The shift of threshold voltage from 300 to 450 K is only of 13 mV. In addition, the studied device also shows good microwave performances with fiat and wide operation regime.
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页码：70 / 75
页数：6
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