CHARACTERISTICS OF A DELTA-DOPED GAAS/LNGAAS P-CHANNEL HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR

被引：9
|
作者：
HSU, RT
HSU, WC
KAO, MJ
WANG, JS
机构：
[1] Department of Electrical Engineering, National Cheng Kung University, Tainan
来源：
APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 21期
关键词：
D O I：
10.1063/1.113455
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A δ-doped GaAs/In0.2Ga0.8As p-channel heterostructure field-effect transistor grown by low-pressure metalorganic chemical vapor deposition is demonstrated. The mobilities and two-dimensional hole gas concentrations at 300 (77) K are 260 (2600) cm2/v s and 2×1012(5.5×1011)cm-2, respectively. For a gate length of 1.5 μm, the maximum extrinsic transconductances are 15 mS/mm at 300 K and 24 mS/mm at 77 K. The high transconductances extend a wide range versus gate voltage.© 1995 American Institute of Physics.
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收藏
页码：2864 / 2866
页数：3
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