THE DELTA-DOPED FIELD-EFFECT TRANSISTOR

被引：111
|
作者：
SCHUBERT, EF
PLOOG, K
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 08期
关键词：
D O I：
10.1143/JJAP.24.L608
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：L608 / L610
页数：3
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