DEEP LEVEL TRANSIENT SPECTROSCOPY MEASUREMENTS ON SI-DOPED ALGAAS/GAAS MODFETS

被引：10
|
作者：
VALOIS, AJ
ROBINSON, GY
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 02期
关键词：
D O I：
10.1116/1.583160
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：649 / 649
页数：1
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