TRANSIENT RADIATION EFFECTS IN ALGAAS/GAAS MODFETS.

被引：0
|
作者：
Anderson, W.T. [1 ]
Simons, M. [1 ]
Tseng, W.F. [1 ]
Herb, J.A. [1 ]
Bandy, S. [1 ]
机构：
[1] US Naval Research Lab, Washington,, DC, USA, US Naval Research Lab, Washington, DC, USA
来源：
IEEE Transactions on Nuclear Science | 1987年 / NS-34卷 / 06期
关键词：
TRANSISTORS; FIELD EFFECT - Doping - X-RAYS;
D O I：
暂无
中图分类号：
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摘要：
Transient radiation effects were measured in AlGaAs/GaAs MODFETs. The temperature dependence of the long-term transients was measured using 3-ns flash X-ray pulses, allowing the observation of trapping levels. These long-term transients were similar to those observed in conventional GaAs FETs, with the exception that persistent photoconductivity was observed in some devices.
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