LOW-TEMPERATURE DEPOSITION OF SILICON-NITRIDE USING UHV ELECTRON-CYCLOTRON RESONANCE PLASMA

被引：0
|
作者：
DZIOBA, S [1 ]
MARGITTAI, A [1 ]
SHEPHERD, FR [1 ]
机构：
[1] BELL NO RES,OTTAWA K1Y 4H7,ONTARIO,CANADA
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 09期
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D O I：
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中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：C450 / C450
页数：1
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