LOW-TEMPERATURE DEPOSITION OF SILICON-NITRIDE USING UHV ELECTRON-CYCLOTRON RESONANCE PLASMA

被引：0
|
作者：
DZIOBA, S [1 ]
MARGITTAI, A [1 ]
SHEPHERD, FR [1 ]
机构：
[1] BELL NO RES,OTTAWA K1Y 4H7,ONTARIO,CANADA
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 09期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C450 / C450
页数：1
相关论文
共 50 条
  • [21] LOW-TEMPERATURE SILICON-NITRIDE DEPOSITION AT LOW-TEMPERATURE USING MICROWAVE-EXCITED ACTIVE NITROGEN
    SHIBAGAKI, M
    HORIIKE, Y
    YAMAZAKI, T
    KASHIWAGI, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (08) : C286 - C286
  • [22] LOW-TEMPERATURE ELECTRON-SPIN-RESONANCE INVESTIGATIONS OF SILICON PARAMAGNETIC DEFECTS IN SILICON-NITRIDE
    WARREN, WL
    RONG, FC
    POINDEXTER, EH
    KANICKI, J
    GERARDI, GJ
    APPLIED PHYSICS LETTERS, 1991, 58 (21) : 2417 - 2419
  • [23] LOW-TEMPERATURE CHEMICAL-VAPOR-DEPOSITION OF SILICON-NITRIDE
    KANOH, H
    SUGIURA, O
    FUJIOKA, S
    ARAMAKI, Y
    HATTORI, T
    MATSUMURA, M
    JOURNAL DE PHYSIQUE IV, 1991, 1 (C2): : 831 - 837
  • [24] LOW-TEMPERATURE DEPOSITION OF SILICON DIOXIDE FILMS FROM ELECTRON-CYCLOTRON RESONANT MICROWAVE PLASMAS
    HERAK, TV
    CHAU, TT
    THOMSON, DJ
    MEJIA, SR
    BUCHANAN, DA
    KAO, KC
    JOURNAL OF APPLIED PHYSICS, 1989, 65 (06) : 2457 - 2463
  • [25] LOW-TEMPERATURE ETCHING OF SILICON TRENCHES WITH SF6 IN AN ELECTRON-CYCLOTRON RESONANCE REACTOR
    WATTS, AJ
    VARHUE, WJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04): : 1313 - 1317
  • [26] Low temperature deposition of silicon nitride films by distributed electron cyclotron resonance plasma-enhanced chemical vapor deposition
    J Vac Sci Technol A, 6 (2900):
  • [27] LOW-TEMPERATURE DEPOSITION OF SIO2 BY DISTRIBUTED ELECTRON-CYCLOTRON RESONANCE PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION
    PLAIS, F
    AGIUS, B
    ABEL, F
    SIEJKA, J
    PUECH, M
    RAVEL, G
    ALNOT, P
    PROUST, N
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (05) : 1489 - 1495
  • [28] LOW-TEMPERATURE DEPOSITION OF AMORPHOUS-SILICON OXIDE AND SILICON-NITRIDE FILMS
    RICHARD, PD
    TSU, DV
    LUCOVSKY, G
    LIN, SY
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 925 - 928
  • [29] LOW-TEMPERATURE EPITAXIAL SILICON FILM GROWTH USING HIGH-VACUUM ELECTRON-CYCLOTRON-RESONANCE PLASMA DEPOSITION
    DEBOER, SJ
    DALAL, VL
    CHUMANOV, G
    BARTELS, R
    APPLIED PHYSICS LETTERS, 1995, 66 (19) : 2528 - 2530
  • [30] LOW-TEMPERATURE SILICON-NITRIDE DEPOSITION USING MICROWAVE-EXCITED ACTIVE NITROGEN
    SHIBAGAKI, M
    HORIIKE, Y
    YAMAZAKI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 215 - 221
12345