LOW-TEMPERATURE DEPOSITION OF SILICON-NITRIDE USING UHV ELECTRON-CYCLOTRON RESONANCE PLASMA

被引：0

作者：

DZIOBA, S ^{[1
]}

MARGITTAI, A ^{[1
]}

SHEPHERD, FR ^{[1
]}

机构：

[1] BELL NO RES,OTTAWA K1Y 4H7,ONTARIO,CANADA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 09期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C450 / C450

页数：1

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