GRAIN-GROWTH IN ARSENIC-IMPLANTED POLYCRYSTALLINE SI

被引:3
|
作者
ZHENG, LR [1 ]
HUNG, LS [1 ]
MAYER, JW [1 ]
机构
[1] CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
关键词
D O I
10.1063/1.98972
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2139 / 2141
页数:3
相关论文
共 50 条
  • [31] THERMODYNAMIC AND KINETIC-PROPERTIES OF ARSENIC-IMPLANTED SILICON
    CEROFOLINI, GF
    MANINI, P
    MEDA, L
    POLIGNANO, ML
    QUEIROLO, G
    NAVA, F
    OTTAVIANI, G
    GALLORINI, M
    THIN SOLID FILMS, 1986, 135 (01) : 59 - 72
  • [32] EDGE EMISSION IN PHOSPHORUS-IMPLANTED AND ARSENIC-IMPLANTED ZINC TELLURIDE
    VERITY, D
    BRYANT, FJ
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 60 (02): : 521 - 529
  • [33] RAPID THERMAL ANNEALING OF ARSENIC-IMPLANTED SILICON - A REVIEW
    FEYGENSON, A
    ZEMEL, JN
    THIN SOLID FILMS, 1988, 165 (01) : 109 - 138
  • [34] THERMAL REDISTRIBUTION OF OXYGEN DURING SOLID-PHASE REGROWTH OF ARSENIC-IMPLANTED AMORPHIZED SI
    MAGEE, TJ
    LEUNG, C
    KAWAYOSHI, H
    ORMOND, R
    FURMAN, BK
    EVANS, CA
    DAY, DS
    APPLIED PHYSICS LETTERS, 1981, 39 (05) : 413 - 415
  • [35] GRAIN-GROWTH
    RALPH, B
    MATERIALS SCIENCE AND TECHNOLOGY, 1990, 6 (11) : 1139 - 1144
  • [36] DEFECTS IN ARSENIC-IMPLANTED P-N-JUNCTIONS
    BOGARDUS, EH
    POPONIAK, MR
    APPLIED PHYSICS LETTERS, 1973, 23 (10) : 553 - 555
  • [37] GRAIN-GROWTH IN SI3N4
    WALLACE, JS
    KELLY, JF
    SILICON NITRIDE 93, 1994, 89-91 : 501 - 505
  • [38] RECOIL OXYGEN IMPLANTS AND THERMAL REDISTRIBUTION OF OXYGEN IN THROUGH-OXIDE ARSENIC-IMPLANTED SI
    MAGEE, TJ
    LEUNG, C
    KAWAYOSHI, H
    PALKUTI, LJ
    FURMAN, BK
    EVANS, CA
    CHRISTEL, LA
    GIBBONS, JF
    DAY, DS
    APPLIED PHYSICS LETTERS, 1981, 39 (07) : 564 - 566
  • [39] REDUCING THE GRAIN-SIZE OF POLYCRYSTALLINE LEAD FILMS BY THE USE OF BARRIERS TO GRAIN-GROWTH
    RONAY, M
    SERRANO, CM
    JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) : 652 - 659
  • [40] GRAIN-GROWTH PHENOMENA OF HEAVILY PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON
    WADA, V
    NISHIMATSU, S
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : C145 - C145