BF2 ION-IMPLANTATION IN SILICON THROUGH SURFACE OXIDES, BEHAVIOR OF THE FLUORINE WITH RAPID THERMAL ANNEALING

被引：7
|
作者：
OZTURK, MC
WORTMAN, JJ
CHU, WK
ROZGONYI, G
GRIFFIS, DP
机构：
[1] UNIV N CAROLINA,DEPT PHYS,CHAPEL HILL,NC 27514
[2] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695
来源：
MATERIALS LETTERS | 1987年 / 5卷 / 09期
关键词：
D O I：
10.1016/0167-577X(87)90118-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：311 / 314
页数：4
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