GAINAS JUNCTION FET WITH INP BUFFER LAYER PREPARED BY SELECTIVE ION-IMPLANTATION OF BE AND RAPID THERMAL ANNEALING

被引：16
|
作者：
SELDERS, J
WACHS, HJ
JURGENSEN, H
机构：
来源：
ELECTRONICS LETTERS | 1986年 / 22卷 / 06期
关键词：
D O I：
10.1049/el:19860215
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：313 / 315
页数：3
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