SLOW CAPTURE OF HOLES AND ELECTRONS BY SURFACE STATES ON GERMANIUM AND SILICON AT LOW TEMPERATURES

被引：8
|
作者：
MORRISON, SR
机构：
来源：
PHYSICAL REVIEW | 1959年 / 114卷 / 02期
关键词：
D O I：
10.1103/PhysRev.114.437
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：437 / 444
页数：8
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