SLOW CAPTURE OF HOLES AND ELECTRONS BY SURFACE STATES ON GERMANIUM AND SILICON AT LOW TEMPERATURES

被引：8

作者：

MORRISON, SR

机构：

来源：

PHYSICAL REVIEW | 1959年 / 114卷 / 02期

关键词：

D O I：

10.1103/PhysRev.114.437

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：437 / 444

页数：8

共 50 条

[31] THEORY OF SURFACE DONOR STATES IN SILICON AND GERMANIUM
KARPUSHIN, AA
SOVIET PHYSICS SOLID STATE,USSR, 1970, 11 (08): : 1748 - +
[32] ATOMIC HEAT OF SILICON AND GERMANIUM AT VERY LOW TEMPERATURES
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PEARLMAN, N
PHYSICAL REVIEW, 1952, 85 (04): : 730 - 730
[33] MOBILITY OF HOLES AND ELECTRICAL BREAKDOWN IN SILICON AT LOW TEMPERATURES
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SOVIET PHYSICS SOLID STATE,USSR, 1965, 7 (04): : 818 - +
[34] RELAXATION TIME OF HOLES IN DEFORMED SILICON AT LOW TEMPERATURES
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SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (12): : 1543 - &
[35] CITATION CLASSIC - CYCLOTRON-RESONANCE OF ELECTRONS AND HOLES IN SILICON AND GERMANIUM-CRYSTALS
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[36] CITATION CLASSIC - CYCLOTRON-RESONANCE OF ELECTRONS AND HOLES IN SILICON AND GERMANIUM-CRYSTALS
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[37] ELECTRONS AND HOLES DRIFT VELOCITY IN SILICON AT VERY LOW TEMPERATURE
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LORIA, A
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OTTAVIANI, G
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[38] INVESTIGATION OF CHARGING OF SLOW SURFACE STATES DURING ILLUMINATION OF GERMANIUM
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KOZLOV, SN
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (05): : 646 - 647
[39] Capture process by shallow donors in silicon at low temperatures
Palma, A.
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Godoy, A.
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Journal De Physique. IV : JP, 1996, 6 (03): : 105 - 110
[40] Capture process by shallow donors in silicon at low temperatures
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