CHARGE CAPTURE BY SURFACE STATES IN THERMALLY OXIDIZED GERMANIUM

被引：0

作者：

KASHKAROV, PK ^{[1
]}

KOZLOV, SN ^{[1
]}

TOSHEVA, MV ^{[1
]}

机构：

[1] MV LOMONOSOV STATE UNIV,MOSCOW,USSR

来源：

IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA | 1975年 / 11期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：68 / 72

页数：5

共 50 条

[1] CHARGING OF A THERMALLY OXIDIZED GERMANIUM SURFACE
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[2] SURFACE PROPERTIES OF THERMALLY OXIDIZED GERMANIUM
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[3] ORIENTATION DEPENDENCE OF BUILT-IN SURFACE CHARGE ON THERMALLY OXIDIZED SILICON
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[4] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON
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[8] DIRECT OBSERVATION OF CHARGE STORAGE IN SURFACE STATES OF GERMANIUM AND SILICON
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