DETERMINATION OF MOSFET DOPING PROFILES USING STEM-EDX

被引：0
|
作者：
RENTELN, P [1 ]
AST, DG [1 ]
机构：
[1] CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14850
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C133 / C133
页数：1
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