THE DEPENDENCE OF MOSFET OUTPUT RESISTANCE ON DRAIN DOPING PROFILES

被引：0
|
作者：
HSU, FC [1 ]
机构：
[1] INTEGRATED DEVICE TECHNOL INC,SANTA CLARA,CA 95052
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 11期
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：1848 / 1849
页数：2
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