DETERMINATION OF MOSFET DOPING PROFILES USING STEM-EDX

被引：0
|
作者：
RENTELN, P [1 ]
AST, DG [1 ]
机构：
[1] CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14850
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C133 / C133
页数：1
相关论文
共 50 条
  • [41] FABRICATION SUBMICROMETER MOSFET'S USING LASER DOPING.
    Carey, P.G.
    Bezjian, K.
    Simon, T.W.
    Magee, T.
    Gildea, P.
    IEEE Transactions on Electron Devices, 1986, ED-33 (11)
  • [42] Accurate determination of doping profile from MOSFET d.c. measurement
    Gupta, S.
    Microelectronics Journal, 1988, 19 (06) : 4 - 7
  • [43] Compositional analysis of Si/SiGe quantum dots using STEM and EDX
    Karim, A.
    Elfving, A.
    Larsson, M.
    Ni, W. -X.
    Hansson, G. V.
    QUANTUM DOTS, PARTICLES, AND NANOCLUSTERS III, 2006, 6129
  • [44] Composition determination in quantum dots with in-plane scattering compared with STEM and EDX analysis
    Fewster, PF
    Holy, V
    Zhi, D
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2003, 36 (10A) : A217 - A221
  • [45] A PROPOSED METHOD FOR RAPID DETERMINATION OF DOPING PROFILES IN SEMICONDUCTOR LAYERS
    LEENOV, D
    STEWART, RG
    PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (11): : 2095 - &
  • [46] Determination of doping profiles on bevelled GaAs structures by Raman spectroscopy
    Srnanek, R
    Kinder, R
    Sciana, B
    Radziewicz, D
    McPhail, DS
    Littlewood, SD
    Novotny, I
    APPLIED SURFACE SCIENCE, 2001, 177 (1-2) : 139 - 145
  • [47] DETERMINATION OF DOPING PROFILES FOR LOW BORON ION IMPLANTATIONS IN SILICON
    KINDER, R
    FRANK, H
    SOLID-STATE ELECTRONICS, 1988, 31 (02) : 265 - 268
  • [48] Non-destructive determination of thickness of the dielectric layers using EDX
    Sokolov, S. A.
    Kelm, E. A.
    Milovanov, R. A.
    Abdullaev, D. A.
    Sidorov, L. N.
    INTERNATIONAL CONFERENCE ON MICRO- AND NANO-ELECTRONICS 2016, 2016, 10224
  • [49] DETERMINATION OF DOPING CONCENTRATION AND INTERFACE CHARGES FOR THIN-FILM SOI MOSFET(S)
    PARK, SK
    KIM, CK
    SOLID-STATE ELECTRONICS, 1993, 36 (05) : 735 - 740
  • [50] Improving Signal-to-Noise Ratio in Scanning Transmission Electron Microscopy Energy-Dispersive X-Ray (STEM-EDX) Spectrum Images Using Single-Atomic-Column Cross-Correlation Averaging
    Jeong, Jong Seok
    Mkhoyan, K. Andre
    MICROSCOPY AND MICROANALYSIS, 2016, 22 (03) : 536 - 543
12345