共 50 条
- [31] Crystallographic structures and parasitic resistances of self-aligned silicide TiSi2/self-aligned nitrided barrier layer/selective chemical vapor deposited aluminum in fully self-aligned metallization metal oxide semiconductor field-effect transistor Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (10): : 5835 - 5838
- [32] COMPARISON OF SELF ALIGNED SILICIDE TECHNOLOGIES BASED ON COSI2 AND TISI2 VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1987, 42 (236): : 111 - 113
- [33] Self-aligned TiN formation by N-2 plasma bias treatment of TiSi2 deposited by selective chemical vapor deposition JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (02): : 642 - 647
- [35] USE OF TISI2 TO FORM METAL-OXIDE SILICON FIELD-EFFECT TRANSISTORS WITH SELF-ALIGNED SOURCE DRAIN AND GATE ELECTRODE JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 992 - 996
- [39] COMPARISON OF SELF-ALIGNED SILICIDE TECHNOLOGIES BASED ON CoSi2 AND TiSi2. Vide, les Couches Minces, 1987, 42 (236): : 111 - 113
- [40] HREM OF TISI2/SI AND TISI2/SIO2 INTERFACES INSTITUTE OF PHYSICS CONFERENCE SERIES, 1991, (117): : 297 - 302