共 50 条
- [21] Agglomeration resistant self-aligned silicide process using N2 implantation into TiSi2 Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1997, 36 (6 A): : 3639 - 3643
- [22] Agglomeration resistant self-aligned silicide process using N2 implantation into TiSi2 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (6A): : 3639 - 3643
- [23] Epitaxial growth of C54 TiSi2 on Si(001) by self-aligned process Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1998, 37 (02): : 638 - 642
- [25] STRUCTURAL AND ELECTRICAL PROPERTIES OF TiSi2/Si INTERFACES IN A CMOS TECHNOLOGY WITH SELF-ALIGNED CONTACTS. Vide, les Couches Minces, 1987, 42 (236): : 107 - 109
- [26] STRUCTURAL AND ELECTRICAL-PROPERTIES OF TISI2/SI INTERFACES IN A CMOS TECHNOLOGY WITH SELF-ALIGNED CONTACTS VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1987, 42 (236): : 107 - 109
- [29] Crystallographic structures and parasitic resistances of self-aligned silicide TiSi2/self-aligned nitrided barrier layer/selective chemical vapor deposited aluminum in fully self-aligned metallization metal oxide semiconductor field-effect transistor JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (10): : 5835 - 5838
- [30] Self-aligned silicides for ohmic contacts in complementary metal-oxide-semiconductor technology:: TiSi2, CoSi2 and NiSi JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2004, 22 (04): : 1361 - 1370