EFFECTS OF ORDERING ON THE OPERATION OF ALGAINP LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

We have observed large differences in the lasing wavelength and threshold current for [110BAR]- and [110]-striped AlGaInP lasers that are fabricated from a single wafer grown by metalorganic chemical vapor deposition. With the laser stripe aligned parallel to the [110] direction, the lasing wavelength is about 6 nm shorter than that with the [110BAR] stripe. The threshold current (I(th)) of the [110]-striped laser is 10 mA higher than that of the [110BAR]-striped laser. The differences are found to be well explained by the splitting of the valence band due to the (111) ordering in the AlGaInP lasers.