EFFECTS OF ORDERING ON THE OPERATION OF ALGAINP LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：18
|
作者：
NAKANO, K
TODA, A
YAMAMOTO, T
ISHIBASHI, A
机构：
[1] SONY Corporation Research Center, Hodogaya, Yokohama 240
来源：
APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 16期
关键词：
D O I：
10.1063/1.108376
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have observed large differences in the lasing wavelength and threshold current for [110BAR]- and [110]-striped AlGaInP lasers that are fabricated from a single wafer grown by metalorganic chemical vapor deposition. With the laser stripe aligned parallel to the [110] direction, the lasing wavelength is about 6 nm shorter than that with the [110BAR] stripe. The threshold current (I(th)) of the [110]-striped laser is 10 mA higher than that of the [110BAR]-striped laser. The differences are found to be well explained by the splitting of the valence band due to the (111) ordering in the AlGaInP lasers.
引用
收藏
页码：1959 / 1961
页数：3
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