INITIAL OBSERVATIONS OF OPTICAL-INJECTION LOCKING OF GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR OSCILLATORS

被引:23
|
作者
SALLES, AA
FORREST, JR
机构
关键词
D O I
10.1063/1.92350
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:392 / 394
页数:3
相关论文
共 50 条
  • [31] A NEW INTERPRETATION OF THE ORIENTATION EFFECT IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    HUANG, QA
    LU, SJ
    TONG, QY
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (1A): : L11 - L14
  • [32] INTEGRATION OF A RESONANT-TUNNELING STRUCTURE WITH A METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
    WOODWARD, TK
    MCGILL, TC
    CHUNG, HF
    BURNHAM, RD
    [J]. APPLIED PHYSICS LETTERS, 1987, 51 (19) : 1542 - 1544
  • [33] HIGH-SPEED RESPONSE OF A GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR TO ELECTRON-BEAM EXCITATION
    FLESNER, LD
    DAVIS, NM
    WIEDER, HH
    [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (05) : 3873 - 3877
  • [34] THE SOURCES OF LOW-FREQUENCY NOISE IN METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
    LOSEV, VL
    MESHCHERYAKOV, AV
    PRIGOROVSKIJ, VM
    [J]. IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII RADIOFIZIKA, 1991, 34 (02): : 198 - &
  • [35] Fabrication of logic circuits using diamond metal-semiconductor field-effect transistor
    Itoh, M
    Hokazono, A
    Noda, H
    Kawarada, H
    [J]. SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 1095 - 1098
  • [36] METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR BASED ON SINGLE-CRYSTAL GAN
    KHAN, MA
    KUZNIA, JN
    BHATTARAI, AR
    OLSON, DT
    [J]. APPLIED PHYSICS LETTERS, 1993, 62 (15) : 1786 - 1787
  • [37] SrSnO3 Metal-Semiconductor Field-Effect Transistor With GHz Operation
    Wen, Jiaxuan
    Chaganti, V. R. Saran Kumar
    Truttmann, Tristan K.
    Liu, Fengdeng
    Jalan, Bharat
    Koester, Steven J.
    [J]. IEEE ELECTRON DEVICE LETTERS, 2021, 42 (01) : 74 - 77
  • [38] GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH EXTREMELY LOW RESISTANCE NONALLOYED OHMIC CONTACTS USING AN INAS/GAAS SUPERLATTICE
    KUMAR, NS
    CHYI, JI
    PENG, CK
    MORKOC, H
    [J]. APPLIED PHYSICS LETTERS, 1989, 55 (08) : 775 - 776
  • [39] GaAs metal-semiconductor field effect transistor with InGaP/GaAs multiquantum barrier buffer layer
    Lee, CT
    Shyu, KC
    Lin, IJ
    Lin, HH
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 74 (1-3): : 147 - 150
  • [40] INSTABILITY AND GATE VOLTAGE NOISE IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    DAY, DJ
    TRUDEAU, M
    MCALISTER, SP
    HURD, CM
    [J]. CANADIAN JOURNAL OF PHYSICS, 1989, 67 (04) : 238 - 241