SrSnO3 Metal-Semiconductor Field-Effect Transistor With GHz Operation

被引：13

作者：

Wen, Jiaxuan ^{[1
]}

Chaganti, V. R. Saran Kumar ^{[1
,2
]}

Truttmann, Tristan K. ^{[3
]}

Liu, Fengdeng ^{[3
]}

Jalan, Bharat ^{[3
]}

Koester, Steven J. ^{[1
]}

机构：

[1] Univ Minnesota, Dept Elect & Comp Engn, Minneapolis, MN 55455 USA

[2] Intel Corp, Hillsboro, OR 97124 USA

[3] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2021年 / 42卷 / 01期

基金：

美国国家科学基金会;

关键词：

MESFET; perovskite; stannate; SrSnO3; RF;

D O I：

10.1109/LED.2020.3040417

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A SrSnO3 high-frequency field-effect transistor (FET) is demonstrated. The device structure consists of a recessed Schottky-gate FET with a heavily doped cap layer. DC measurements on devices with 0.5-mu m gate length and 4-mu m source/drain spacing show a maximum drain current of 53 mA/mm and a maximum transconductance of 43.2mS/mm. Radio frequency (RF) characterization reveals a cut-off frequency, f(T), of 1.31 GHz (0.97 GHz) and a maximum oscillation frequency, f(max), of 3.25 (3.25) GHz, after (before) de-embedding. These results represent an important advancement in developing perovskite materials for RF applications.

引用

页码：74 / 77

页数：4

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