Fabrication of logic circuits using diamond metal-semiconductor field-effect transistor

Metal-semiconductor field-effect transistors (MESFETs) have been fabricated using the p-type surface-conductive layer of diamond film. The surface-conductive layers have been employed as the channel of MESFETs. Since that surface-conductive layer is ultrathin, these MESFETs exhibit the enhancement mode in the gate metal with high Schottky barrier hight. These MESFETs exhibit channel pinch-off, complete current saturation, and the highest transconductance in diamond FETs. The device isolation has been carried out by insulating surface-conductive layer except for channel with exporsure of Ar+. With this technique, the fabrications of diamond logic circuits and memories (NAND, NOR, NOT, and RS flipflop) are demonstrated for the first time.