A DOUBLE-WORD-LINE STRUCTURE IN BIPOLAR ECL RANDOM-ACCESS MEMORY

被引：1

|

作者：

KAYANO, S

ANAMI, K

NAKASE, Y

SHIOMI, T

IKEDA, T

机构：

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1987年 / 22卷 / 04期

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D O I：

10.1109/JSSC.1987.1052770

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：543 / 547

页数：5

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