Magnetic random-access memory

The recently developed magnetic random access memory (MRAM) has the potential to store as much data as dynamic random access memory (DRAM), write it faster and access it instantly, consuming less energy. MRAM stores data in the spin of electrons inside tiny magnetic sandwiches. The sandwiches don't lose their magnetism or memory, even if the power goes out. MRAM is made of thin insulating layer sandwiched between two magnets and the magnets can have fields depending on the way their electrons spin. An electrical sensor at the end of the top electrode reads the resistance and determines the binary state of the cell that was read.