A REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY OF ALAS/GAAS TILTED SUPERLATTICE GROWTH BY MIGRATION-ENHANCED EPITAXY

被引：19
|
作者：
CHALMERS, SA [1 ]
GOSSARD, AC [1 ]
PETROFF, PM [1 ]
KROEMER, H [1 ]
机构：
[1] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 03期
关键词：
D O I：
10.1116/1.585039
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：431 / 435
页数：5
相关论文
共 50 条
  • [31] STOICHIOMETRIC LOW-TEMPERATURE GAAS AND ALGAAS - A REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY
    MISSOUS, M
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (07) : 4467 - 4471
  • [32] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY OF NITROGEN PLASMA INTERACTIONS WITH A GAAS (100) SURFACE
    HAUENSTEIN, RJ
    COLLINS, DA
    CAI, XP
    OSTEEN, ML
    MCGILL, TC
    APPLIED PHYSICS LETTERS, 1995, 66 (21) : 2861 - 2863
  • [33] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS AND ANISOTROPY ON VICINAL ALAS(001) DURING MOLECULAR-BEAM EPITAXY
    SHITARA, T
    NEAVE, JH
    JOYCE, BA
    APPLIED PHYSICS LETTERS, 1993, 62 (14) : 1658 - 1660
  • [34] GROWTH OF GAAS/ERAS/GAAS STRUCTURES BY MIGRATION-ENHANCED EPITAXY
    YAMAGUCHI, H
    HORIKOSHI, Y
    APPLIED PHYSICS LETTERS, 1992, 60 (19) : 2341 - 2343
  • [35] GROWTH-MECHANISM IN MIGRATION-ENHANCED EPITAXY OF ALAS ON MISORIENTED GAAS(111)B SUBSTRATES
    TAKANO, Y
    TORIHATA, T
    KAWAI, T
    PAK, K
    YONEZU, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (08): : L1346 - L1349
  • [36] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY OF THE GROWTH OF GE ON THE GE(111) SURFACE
    FUKUTANI, K
    DAIMON, H
    INO, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (10): : 3429 - 3435
  • [37] INITIAL GROWTH-MECHANISM OF SI ON GAAS STUDIED BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATIONS
    LOPEZ, M
    TAKANO, Y
    PAK, K
    YONEZU, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (6A): : 1745 - 1751
  • [38] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING GROWTH OF (AL,CA)AS ON GAAS(111)A
    SATO, K
    FAHY, MR
    KAMIYA, I
    NEAVE, JH
    JOYCE, BA
    JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 77 - 80
  • [39] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY OF THE GASB SURFACE DURING MOLECULAR-BEAM EPITAXY
    YANO, M
    YAMAMOTO, K
    UTATSU, T
    INOUE, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02): : 1133 - 1135
  • [40] Area selective growth of GaAs by migration-enhanced epitaxy
    Horikoshi, Y.
    Uehara, T.
    Iwai, T.
    Yoshiba, I.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2007, 244 (08): : 2697 - 2706
12345