A REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY OF ALAS/GAAS TILTED SUPERLATTICE GROWTH BY MIGRATION-ENHANCED EPITAXY

被引：19
|
作者：
CHALMERS, SA [1 ]
GOSSARD, AC [1 ]
PETROFF, PM [1 ]
KROEMER, H [1 ]
机构：
[1] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 03期
关键词：
D O I：
10.1116/1.585039
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：431 / 435
页数：5
相关论文
共 50 条
  • [21] THEORY OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION
    NAGANO, S
    PHYSICAL REVIEW B, 1990, 42 (12): : 7363 - 7369
  • [22] DIFFUSE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION
    KORTE, U
    MEYEREHMSEN, G
    PHYSICAL REVIEW B, 1993, 48 (11): : 8345 - 8355
  • [23] Azimuthal reflection high-energy electron diffraction study of MnAs growth on GaAs(001) by molecular beam epitaxy
    Satapathy, Dillip K.
    Jenichen, Bernd
    Ploog, Klaus H.
    Braun, Wolfgang
    JOURNAL OF APPLIED PHYSICS, 2011, 110 (02)
  • [24] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OF HETEROEPITAXY IN CHEMICAL VAPOR-DEPOSITION REACTOR - ATOMIC-LAYER EPITAXY OF GAAS, ALAS AND GAP ON SI
    KITAHARA, K
    OZEKI, M
    NAKAJIMA, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (3A): : 1051 - 1055
  • [25] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY OF THE GAASSIGAAS SYSTEM
    FAHY, MR
    ASHWIN, MJ
    HARRIS, JJ
    NEWMAN, RC
    JOYCE, BA
    APPLIED PHYSICS LETTERS, 1992, 61 (15) : 1805 - 1807
  • [26] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION TRANSMISSION ELECTRON-MICROSCOPY OBSERVATION OF GROWTH OF INAS ON GAAS(110) BY MOLECULAR-BEAM EPITAXY
    ZHANG, X
    PASHLEY, DW
    NEAVE, JH
    FAWCETT, PN
    ZHANG, J
    JOYCE, BA
    JOURNAL OF CRYSTAL GROWTH, 1993, 132 (1-2) : 331 - 334
  • [27] DYNAMIC REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OBSERVATIONS OF THE ATOMIC LAYER EPITAXY GROWTH OF ZN CHALCOGENIDES
    YAO, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (12): : L942 - L944
  • [28] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY OF (111) AND (001) CDTE GROWN ON (001) GAAS BY PULSED LASER EVAPORATION AND EPITAXY
    DUBOWSKI, JJ
    WILLIAMS, DF
    WROBEL, JM
    SEWELL, PB
    LEGEYT, J
    HALPIN, C
    TODD, D
    CANADIAN JOURNAL OF PHYSICS, 1989, 67 (04) : 343 - 346
  • [29] DAMPED OSCILLATIONS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING GAAS MBE
    VANHOVE, JM
    LENT, CS
    PUKITE, PR
    COHEN, PI
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 741 - 746
  • [30] GROWTH OF GAAS-AL-GAAS BY MIGRATION-ENHANCED EPITAXY
    TADAYON, B
    TADAYON, S
    SPENCER, MG
    HARRIS, GL
    RATHBUN, L
    BRADSHAW, JT
    SCHAFF, WJ
    TASKER, PJ
    EASTMAN, LF
    APPLIED PHYSICS LETTERS, 1988, 53 (26) : 2664 - 2665
12345