INTERDIFFUSION-ASSISTED DISLOCATION MIGRATION IN GAAS/GA1-XALXAS LAYERS ON SI(001)

被引：1

作者：

CHERNS, D ^{[1
]}

LORETTO, D ^{[1
]}

CHAND, N ^{[1
]}

BAHNCK, D ^{[1
]}

GIBSON, JM ^{[1
]}

机构：

[1] UNIV BRISTOL,HH WILLS PHYS LAB,BRISTOL BS8 1TL,AVON,ENGLAND

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1991年 / 63卷 / 06期

关键词：

D O I：

10.1080/01418619108205587

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Lateral dislocation migration has been observed at interfaces in epitaxial GaAs/Ga1-xAl(x)As layers grown on GaAs/Si(001) films. Observations are reported, suggesting that the passage of these dislocations results in layer interdiffusion in a band of material 25-50 angstrom thick parallel to the slip plane. A new mechanism is proposed whereby the lowering of total film energy by interdiffusion provides a driving force for dislocation migration. For GaAs/Ga1-xAl(x)As at the growth temperature of 600-degrees-C, the driving force can be up to 70 times greater than that possible by relief of misfit strain energy. It is estimated that interdiffusion-assisted dislocation migration may be important in systems where the natural mismatch is up to 2-3%.

引用

页码：1335 / 1344

页数：10

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