INVESTIGATION OF INTRINSIC AND EXTRINSIC PHOTOLUMINESCENCE IN GAAS/GA1-XALXAS MQW

被引:5
|
作者
BALKAN, N
RIDLEY, BK
FROST, J
ANDREWS, DA
GOODRIDGE, I
ROBERTS, J
机构
[1] UNIV GLASGOW,GLASGOW G12 8QQ,SCOTLAND
[2] BRITISH TELECOM RES LABS,IPSWICH IP5 7RE,SUFFOLK,ENGLAND
[3] PLESSEY RES LTD,CASWELL,ENGLAND
关键词
D O I
10.1016/0749-6036(86)90047-9
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:357 / 361
页数:5
相关论文
共 50 条
  • [1] INVESTIGATION OF INTRINSIC AND EXTRINSIC PHOTOLUMINESCENCE IN GaAs/Ga1 - xAlxAs MQW.
    Balkan, N.
    Ridley, B.K.
    Frost, J.
    Andrews, D.A.
    Goodridge, I.
    Roberts, J.
    1600, (02):
  • [2] VERTICAL TRANSPORT IN GAAS GA1-XALXAS SUPERLATTICES OBSERVED BY PHOTOLUMINESCENCE
    CHOMETTE, A
    DEVEAUD, B
    EMERY, JY
    REGRENY, A
    LAMBERT, B
    SOLID STATE COMMUNICATIONS, 1985, 54 (01) : 75 - 78
  • [3] GAAS/GA1-XALXAS AND GA1-XALXAS/GAAS HETEROINTERFACES GROWN BY MOLECULAR-BEAM EPITAXY
    ALEXANDRE, F
    LIEVIN, JL
    MEYNADIER, MH
    DELALANDE, C
    SURFACE SCIENCE, 1986, 168 (1-3) : 454 - 461
  • [4] INVESTIGATION OF HETEROSTRUCTURE DEFECTS FOR LPE GA1-XALXAS/GAAS
    SHEN, HY
    LIANG, JW
    CHU, JM
    JOURNAL OF CRYSTAL GROWTH, 1985, 71 (03) : 483 - 490
  • [5] Modeling and characterization of GaAs/Ga1-xAlxAs MQW acousto-electro-optic modulators
    Gazalet, J
    Sainte-Rose, F
    Lefebvre, JE
    Gryba, T
    2001 IEEE ULTRASONICS SYMPOSIUM PROCEEDINGS, VOLS 1 AND 2, 2001, : 27 - 29
  • [6] MULTIBARRIER TUNNELING IN GA1-XALXAS/GAAS HETEROSTRUCTURES
    VASSELL, MO
    LEE, J
    LOCKWOOD, HF
    JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5206 - 5213
  • [7] INVESTIGATION OF SURFACE-ROUGHNESS OF MOLECULAR-BEAM EPITAXY GA1-XALXAS LAYERS AND ITS CONSEQUENCES ON GAAS/GA1-XALXAS HETEROSTRUCTURES
    ALEXANDRE, F
    GOLDSTEIN, L
    LEROUX, G
    JONCOUR, MC
    THIBIERGE, H
    RAO, EVK
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 950 - 955
  • [8] Measurements of Ga1-xAlxAs layers on GaAs with EDS
    Rohrbacher, K
    Klein, P
    Andrae, M
    Wernisch, J
    MIKROCHIMICA ACTA, 1996, : 501 - 506
  • [9] ACCEPTOR-RELATED PHOTOLUMINESCENCE STUDY IN GAAS/GA1-XALXAS QUANTUM-WELLS
    OLIVEIRA, LE
    LOPEZGONDAR, J
    PHYSICAL REVIEW B, 1990, 41 (06): : 3719 - 3727
  • [10] Exciton dynamics in GaAs/Ga1-xAlxAs heterojunctions and GaAs epilayers
    Shen, JX
    Pittini, R
    Oka, Y
    Kurtz, E
    PHYSICAL REVIEW B, 2000, 61 (04): : 2765 - 2772