REACTIVE ION ETCHING OF POLYCRYSTALLINE SILICON USING SICL4

被引：10
|
作者：
TANG, YS
WILKINSON, CDW
机构：
[1] Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow
来源：
APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 25期
关键词：
D O I：
10.1063/1.104715
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Reactive ion etching of polycrystalline silicon using SiCl4 was used to etch 70-nm-wide structures. The etching mechanism of the process was investigated by using emission spectroscopy. It was found that the principal etchant for polycrystalline silicon is Cl2+.
引用
收藏
页码：2898 / 2900
页数：3
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